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APT24F50B Fiches technique(PDF) 2 Page - Microsemi Corporation |
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APT24F50B Fiches technique(HTML) 2 Page - Microsemi Corporation |
2 / 4 page Static Characteristics TJ = 25°C unless otherwise specified Dynamic Characteristics TJ = 25°C unless otherwise specified Source-Drain Diode Characteristics 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T J = 25°C, L = 8.18mH, RG = 4.7Ω, IAS = 11A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 C o(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 C o(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of V DS less than V(BR)DSS, use this equation: Co(er) = -8.43E-8/VDS^2 + 1.96E-8/VDS + 5.61E-11. 6 R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. G D S Unit V V/°C Ω V mV/°C µA nA Unit S pF nC ns Unit A V ns µC A V/ns Min Typ Max 500 0.60 0.11 0.14 3 4 5 -10 250 1000 ±100 Min Typ Max 24 70 1.0 210 400 0.68 1.64 7.1 9.7 20 Min Typ Max 17 3630 50 390 225 115 90 21 41 16 19 41 14 Test Conditions V GS = 0V, ID = 250µA Reference to 25°C, I D = 250µA V GS = 10V, ID = 11A V GS = VDS, ID = 1mA V DS = 500V T J = 25°C V GS = 0V T J = 125°C V GS = ±30V Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) I SD = 11A, TJ = 25°C, VGS = 0V T J = 25°C T J = 125°C I SD = 11A 3 T J = 25°C di SD/dt = 100A/µs T J = 125°C V DD = 100V T J = 25°C T J = 125°C I SD ≤ 11A, di/dt ≤1000A/µs, VDD = 333V, T J = 125°C Test Conditions V DS = 50V, ID = 11A V GS = 0V, VDS = 25V f = 1MHz V GS = 0V, VDS = 0V to 333V V GS = 0 to 10V, ID = 11A, V DS = 250V Resistive Switching V DD = 333V, ID = 11A R G = 4.7Ω 6 , V GG = 15V Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Symbol V BR(DSS) ∆V BR(DSS)/∆TJ R DS(on) V GS(th) ∆V GS(th)/∆TJ I DSS I GSS Symbol I S I SM V SD t rr Q rr I rrm dv/dt Symbol g fs C iss C rss C oss C o(cr) 4 C o(er) 5 Q g Q gs Q gd t d(on) t r t d(off) t f AP24F50B_S |
Numéro de pièce similaire - APT24F50B |
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Description similaire - APT24F50B |
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