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TDA1517ATW Fiches technique(PDF) 5 Page - NXP Semiconductors |
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TDA1517ATW Fiches technique(HTML) 5 Page - NXP Semiconductors |
5 / 20 page 2001 Apr 17 5 Philips Semiconductors Product specification 8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). THERMAL CHARACTERISTICS DC CHARACTERISTICS VP = 12 V; Tamb =25 °C; measured in Fig.3; unless otherwise specified. Note 1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT. VP supply voltage − 18 V VPSC AC and DC short-circuit-safe voltage − 18 V Vrp reverse polarity voltage − 6V ERGo energy handling capability at outputs VP =0V − 200 mJ IOSM non-repetitive peak output current − 4A IORM repetitive peak output current − 2.5 A Ptot total power dissipation − 5W Tvj virtual junction temperature − 150 °C Tstg storage temperature −55 +150 °C Tamb ambient temperature −40 +85 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT tbf −− SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP supply voltage note 1 6.0 12 18 V Iq quiescent current RL = ∞− 40 80 mA Operating condition VMODE(oper) mode switch voltage level 8.5 − VP V IMODE(oper) mode switch current VMODE =12V − 15 40 µA VO DC output voltage − 5.7 − V ∆VOO DC output offset voltage −− 150 mV Mute condition VMODE(mute) mode switch voltage level 3.3 − 6.4 V VO DC output voltage − 5.7 − V ∆V OO DC output offset voltage −− 150 mV Standby condition VMODE(stb) mode switch voltage level 0 − 2V Istb standby current − 0.1 100 µA |
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