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TDA1517ATW Fiches technique(PDF) 5 Page - NXP Semiconductors

No de pièce TDA1517ATW
Description  8 W BTL or 2 x 4 W SE power amplifier
Download  20 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA1517ATW Fiches technique(HTML) 5 Page - NXP Semiconductors

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2001 Apr 17
5
Philips Semiconductors
Product specification
8 W BTL or 2
× 4 W SE power amplifier
TDA1517ATW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
VP = 12 V; Tamb =25 °C; measured in Fig.3; unless otherwise specified.
Note
1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT.
VP
supply voltage
18
V
VPSC
AC and DC short-circuit-safe voltage
18
V
Vrp
reverse polarity voltage
6V
ERGo
energy handling capability at outputs
VP =0V
200
mJ
IOSM
non-repetitive peak output current
4A
IORM
repetitive peak output current
2.5
A
Ptot
total power dissipation
5W
Tvj
virtual junction temperature
150
°C
Tstg
storage temperature
−55
+150
°C
Tamb
ambient temperature
−40
+85
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
tbf
−−
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VP
supply voltage
note 1
6.0
12
18
V
Iq
quiescent current
RL = ∞−
40
80
mA
Operating condition
VMODE(oper)
mode switch voltage level
8.5
VP
V
IMODE(oper)
mode switch current
VMODE =12V
15
40
µA
VO
DC output voltage
5.7
V
∆VOO
DC output offset voltage
−−
150
mV
Mute condition
VMODE(mute) mode switch voltage level
3.3
6.4
V
VO
DC output voltage
5.7
V
∆V
OO
DC output offset voltage
−−
150
mV
Standby condition
VMODE(stb)
mode switch voltage level
0
2V
Istb
standby current
0.1
100
µA


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