BAS16VV_BAS16VY_3

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 03 — 20 April 2007

3 of 12

NXP Semiconductors

BAS16VV; BAS16VY

Triple high-speed switching diodes

5.

Limiting values

[1]

[2]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3]

Soldering points at pins 4, 5 and 6.

6.

Thermal characteristics

[1]

Reflow soldering is the only recommended soldering method.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3]

[4]

Soldering points at pins 4, 5 and 6.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

repetitive peak reverse voltage

-

100

V

reverse voltage

-

100

V

forward current

-

200

mA

repetitive peak forward current

-

450

mA

non-repetitive peak forward

current

square wave

[1]

-

4.5

A

-

1

A

-

0.5

A

total power dissipation

BAS16VV

[2] -

180

mW

BAS16VY

[3] -

250

mW

Per device

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

thermal resistance from

junction to ambient

in free air

[1]

BAS16VV

[2] -

-

700

K/W

[3] -

-

410

K/W

thermal resistance from

junction to solder point

BAS16VY

[4] -

-

260

K/W