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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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BAP50-05W Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BAP50-05W Fiches technique(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  2001 Apr 17 3 Philips Semiconductors Product specification General purpose PIN diode BAP50-05W ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode VF forward voltage IF =50mA − 0.95 1.1 V VR reverse voltage IR =10 µA50 −− V IR reverse current VR =50V −− 100 nA Cd diode capacitance VR = 0; f = 1 MHz − 0.45 − pF VR = 1 V; f = 1 MHz − 0.35 0.6 pF VR = 5 V; f = 1 MHz − 0.3 0.5 pF rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 − 25 40 Ω IF = 1 mA; f = 100 MHz; note 1 − 14 25 Ω IF = 10 mA; f = 100 MHz; note 1 − 35 Ω |s 21| 2 isolation VR = 0; f = 900 MHz − 19 − dB VR = 0; f = 1800 MHz − 15.7 − dB VR = 0; f = 2450 MHz − 13.5 − dB |s 21| 2 insertion loss IF = 0.5 mA; f = 900 MHz − 1.84 − dB IF = 0.5 mA; f = 1800 MHz − 1.90 − dB IF = 0.5 mA; f = 2450 MHz − 1.92 − dB |s 21| 2 insertion loss IF = 1 mA; f = 900 MHz − 1.08 − dB IF = 1 mA; f = 1800 MHz − 1.13 − dB IF = 1 mA; f = 2450 MHz − 1.17 − dB |s21|2 insertion loss IF = 10 mA; f = 900 MHz − 0.26 − dB IF = 10 mA; f = 1800 MHz − 0.30 − dB IF = 10 mA; f = 2450 MHz − 0.36 − dB τ L charge carrier life time when switched from IF =10mA to IR = 6 mA; RL = 100 Ω; measured at IR =3mA − 1.05 −µs LS series inductance IF = 100 mA; f = 100 MHz − 1.6 − nH SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 250 K/W |
Numéro de pièce similaire - BAP50-05W |
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Description similaire - BAP50-05W |
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