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DMBT5087 Fiches technique(PDF) 1 Page - Dc Components |
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1 / 1 page DMBT5087 DISCRETE SEMICONDUCTORS R DC COMPONENTS CO., LTD. TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low noise, high gain, general purpose amplifier applications. Pinning 1 = Base 2 = Emitter 3 = Collector .091(2.30) .067(1.70) SOT-23 Dimensions in inches and (millimeters) .063(1.60) .055(1.40) .108(0.65) .089(0.25) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .020(0.50) .012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30) .035(0.90) .026(0.65) .010(0.25) Max .027(0.67) .013(0.32) 2 1 3 Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -3 V Collector Current IC -50 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o C Storage Temperature TSTG -55 to +150 o C Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO -50 - - V IC=-100 µA Collector-Emitter Breakdown Voltage BVCEO -50 - - V IC=-1mA Emitter-Base Breakdown Volatge BVEBO -3 - - V IE=-10 µA Collector Cutoff Current ICBO1 - - -10 nA VCB=-10V ICBO2 - - -50 nA VCB=-35V Collector-Emitter Saturation Voltage(1) VCE(sat) - - -0.3 V IC=-10mA, IB=-1mA Base-Emitter Saturation Voltage(1) VBE(sat) - - -0.85 V IC=-10mA, IB=-1mA hFE1 250 - 800 - IC=-0.1mA, VCE=-5V DC Current Gain(1) hFE2 250 - - - IC=-1mA, VCE=-5V hFE3 250 - - - IC=-10mA, VCE=-5V Transition Frequency fT 40 - - MHz IC=-0.5mA, VCE=-5V, f=100MHz Output Capacitance Cob - - 4 pF VCB=-5V, f=100MHz Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380 µs, Duty Cycle 2% |
Numéro de pièce similaire - DMBT5087 |
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Description similaire - DMBT5087 |
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