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TPS2412PWRG4 Fiches technique(PDF) 6 Page - Texas Instruments

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No de pièce TPS2412PWRG4
Description  N1 and ORing Power Rail Controller
Download  21 Pages
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Fabricant  TI [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI - Texas Instruments

TPS2412PWRG4 Fiches technique(HTML) 6 Page - Texas Instruments

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DETAILED DESCRIPTION
-470.02
R(RSET)
V
- 0.00314
(OFF)
æ
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(1)
TPS2412
TPS2413
SLVS728A – JANUARY 2007 – REVISED FEBRUARY 2007
The following descriptions refer to the pinout and the functional block diagram.
A, C: The A pin serves as the simulated diode anode and the C as the cathode. GATE is driven high when V(AC)
exceeds 10 mV. Both devices provide a strong GATE pull-down when V(AC) is less than the programmable fast
turn-off threshold. The TPS2412 has a soft pull-down when V(AC) is less than 10 mV but above the fast turn-off
threshold.
Several internal comparator and amplifier circuits monitor these two pins. The inputs are protected from excess
differential voltage by a clamp diode and series resistance. If C falls below A by more than about 0.7 V, a small
current flows out of C. Protect the internal circuits with an external clamp if C can be more than 6 V lower
than A.
The internal charge pump output, which provides bias power to the comparators and voltage to drive GATE, is
referenced to A. Some charge pump current appears on A due to this topology. The A and C pins should be
Kelvin connected to the MOSFET source and drain. A and C connections should also be short and low
impedance, with special attention to the A connection. Residual noise from the charge pump can be reduced
with a bypass capacitor at A if the application permits.
BYP: BYP is the internal charge pump output, and the positive supply voltage for internal comparator circuits
and GATE driver. A capacitor must be connected from BYP to A. While the capacitor value is not critical, a
2200-pF ceramic is recommended. Traces to this part must be kept short and low impedance to provide
adequate filtering. Shorting this pin to a voltage below A damages the TPS2412/13.
GATE: Gate controls the external N channel MOSFET gate. GATE is driven positive with respect to A by a
driver operating from the voltage on BYP. A time-limited high current discharge source pulls GATE to GND when
the fast turn-off comparator is activated. The high-current discharge is followed by a sustaining pull-down. The
turn-off circuits are disabled by the thermal shutdown, leaving a resistive pull-down to keep the gate from
floating. The gate connection should be kept low impedance to maximize turn-off current.
GND: This is the input supply reference. GND should have a low impedance connection to the ground plane. It
carries several Amperes of rapid-rising discharge current when the external MOSFET is turned off, and also
carries significant charge pump currents.
RSET: A resistor connected from this pin to GND sets the fast V(A-C) comparator turn-off threshold. The
threshold is slightly positive when the RSET pin is left open. Current drawn by the resistor programs the turn-off
voltage to increasing negative values. The TPS2413 must have a negative threshold programmed to avoid an
unstable condition at light load. The expression for R(RSET) in terms of the trip voltage, V(OFF), follows.
The units of the numerator are (V
× V/A). V
(OFF) is positive for V(A) greater than V(C), V(OFF) is less than 3 mV,
and R(RSET) is in ohms.
RSVD: Connect to ground.
VDD: VDD is the primary supply for the gate drive charge pump and other internal circuits. This pin must be
connected a source that is 3 V or greater when the external MOSFET is to be turned on. VDD may be greater or
lower than the controlled bus voltage.
A 0.01-
µF bypass capacitor, or 10-Ω and a 0.01-µF filter, is recommended because charge pump currents are
drawn through VDD.
6
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