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TPS2020-Q1 Fiches technique(PDF) 3 Page - Texas Instruments |
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TPS2020-Q1 Fiches technique(HTML) 3 Page - Texas Instruments |
3 / 23 page TPS2020Q1, TPS2021Q1 TPS2022Q1, TPS2023Q1, TPS2024Q1 POWERDISTRIBUTION SWITCHES SGLS260C − SEPTEMBER 2004 − REVISED NOVEMBER 2004 3 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 detailed description power switch The power switch is an N-channel MOSFET with a maximum on-state resistance of 50 m Ω (VI(IN) = 5 V). Configured as a high-side switch, the power switch prevents current flow from OUT to IN and IN to OUT when disabled. charge pump An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires little supply current. driver The driver controls the gate voltage of the power switch. To limit large current surges and reduce the associated electromagnetic interference (EMI) produced, the driver incorporates circuitry that controls the rise times and fall times of the output voltage. The rise and fall times are typically in the 2-ms to 9-ms range. enable ( EN ) The logic enable disables the power switch, the bias for the charge pump, driver, and other circuitry to reduce the supply current to less than 10 µA when a logic high is present on EN. A logic zero input on EN restores bias to the drive and control circuits and turns the power on. The enable input is compatible with both TTL and CMOS logic levels. overcurrent ( OC ) The OC open drain output is asserted (active low) when an overcurrent or overtemperature condition is encountered. The output remains asserted until the overcurrent or overtemperature condition is removed. current sense A sense FET monitors the current supplied to the load. The sense FET measures current more efficiently than conventional resistance methods. When an overload or short circuit is encountered, the current-sense circuitry sends a control signal to the driver. The driver, in turn, reduces the gate voltage and drives the power FET into its saturation region, which switches the output into a constant current mode and holds the current constant while varying the voltage on the load. thermal sense An internal thermal-sense circuit shuts off the power switch when the junction temperature rises to approximately 140 °C. Hysteresis is built into the thermal sense circuit. After the device has cooled approximately 20°C, the switch turns back on. The switch continues to cycle off and on until the fault is removed. undervoltage lockout A voltage sense circuit monitors the input voltage. When the input voltage is below approximately 2 V, a control signal turns off the power switch. |
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Description similaire - TPS2020-Q1 |
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