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MC34703PNB Fiches technique(PDF) 11 Page - Freescale Semiconductor, Inc |
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MC34703PNB Fiches technique(HTML) 11 Page - Freescale Semiconductor, Inc |
11 / 46 page Analog Integrated Circuit Device Data Freescale Semiconductor 11 34703 ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS Table 4. Dynamic Electrical Characteristics Characteristics noted under conditions -40°C ≤ T J ≤ 125°C unless otherwise noted. Input voltages VIN1 = VIN2 = 3.3 V using the typical application circuit (see Figure 27) unless otherwise noted. Characteristic Symbol Min Typ Max Unit BUCK CONVERTER (SW, SR) Duty Cycle Range (Normal Operation) (22) D 10 – 90 % Switching Node SW Rise Time (22) ILOAD = 10 A, SR = OPEN, VIN1 = VIN2 = 3.3 V tROPEN – 10 – ns Switching Node SW Fall Time (22) ILOAD = 10 A, SR = OPEN, VIN1 = VIN2 = 3.3 V tFOPEN – 10 – ns Switching Node SW Rise Time (22) ILOAD = 10 A, SR = SW, VIN1 = VIN2 = 3.3 V tRSW – 14 – ns Switching Node SW Fall Time (22) ILOAD = 10 A, SR = SW, VIN1 = VIN2 = 3.3 V tFSW – 14 – ns Switching Node SW Rise Time (22) ILOAD = 10 A, SR = BOOT,VIN1 = VIN2 = 3.3 V tRBOOT – 6.0 – ns Switching Node SW Fall Time (22) ILOAD = 10 A, SR = BOOT, VIN1 = VIN2 = 3.3 V tFBOOT – 6.0 – ns Maximum Deadtime (22) tD – 150 – ns Buck Control Loop Propagation Delay (22) VINV < 0.8 V to VSW > 90% of High Level or VINV > 0.8 V to VSW < 10% of Low Level tPD – 50 – ns Soft Start Duration (Power Sequencing Disabled, EN1 = 1, EN2 = 1) (22) tSS 800 µs Fault Condition Timeout (22) tFAULT – 10 – ms Retry Timer Cycle (22) tRET – 100 – ms OSCILLATOR (FREQ) Oscillator Default Frequency (Switching Frequency), FREQ Pin Open fOSC 250 300 350 kHz Oscillator Frequency Range fOSC 200 400 kHz Oscillator Output Signal Duty Cycle (Square Wave, 180° Out-of-Phase with the Internal Suitable Oscillator) (23) DOSC – 50 – % Synchronization Pulse Minimum Duration (22) tSYNC 300 – – ns BOOST REGULATOR (VBST, VBST (sense), VBD) Boost Regulator FET Maximum ON Time (23) tON – 24 – µs Boost Regulator Control Loop Propagation Delay (22) tBSTPD – 50 – ns Boost Switching Node VBD Rise Time (22) IBST = 45 mA tBR – 35 – ns Boost Switching Node VBD Fall Time (22) IBST = 45 mA tBF – 5.0 – ns Notes 22. Design Information only. Not production tested. 23. Not production tested for typical values specified. |
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