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LM26001MXA Fiches technique(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No de pièce LM26001MXA
Description  1.5A Switching Regulator with High Efficiency Sleep Mode
Download  17 Pages
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Fabricant  NSC [National Semiconductor (TI)]
Site Internet  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM26001MXA Fiches technique(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Voltages from the indicated pins to GND:
VIN
-0.3V to 40V
SW (Note 7)
-0.5V to 40V
VDD
-0.3V to 7V
VBIAS
-0.3V to 10V
FB
-0.3V to 6V
BOOT
SW-0.3V to SW+7V
PGOOD
-0.3V to 7V
FREQ
-0.3V to 7V
SYNC
-0.3V to 7V
EN
-0.3V to 40V
FPWM
-0.3V to 7V
SS
-0.3V to 7V
Storage Temperature
-65˚C to +150˚C
Power Dissipation (Note 2)
2.6 W
Recommended Lead
Temperature
Vapor Phase (70s)
215˚C
Infrared (15s)
220˚C
ESD Susceptibility (Note 3)
Machine Model
200V
Human Body Model
2KV
Charged Device Model
1kV
Operating Ratings (Note 1)
Operating Junction Temp.
−40˚C to 125˚C
Supply Voltage (Note 4)
3.0V to 38V
Electrical Characteristics Specifications in standard type are for T
J = 25˚C only, and limits in boldface type
apply over the junction temperature (T
J) range of -40˚C to +125˚C. Unless otherwise stated, Vin=12V. Minimum and Maxi-
mum limits are guaranteed through test, design, or statistical correlation. Typical values represent the most likely parametric
norm at T
J = 25˚C, and are provided for reference purposes only. (Note 5)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
System
I
SD (Note 6)
Shutdown Current
EN = 0V
9.5
20
µA
Iq
_Sleep_VB (Note
6)
Quiescent Current
Sleep mode, VBIAS = 5V
38
70
µA
Iq
_Sleep_VDD
Quiescent Current
Sleep mode, VBIAS = GND
83
150
µA
Iq
_PWM_VB
Quiescent Current
PWM mode, VBIAS = 5V
150
230
µA
Iq
_PWM_VDD
Quiescent Current
PWM mode, VBIAS = GND
0.65
0.85
mA
I
BIAS_Sleep (Note 6)
Bias Current
Sleep mode, VBIAS = 5V
43
105
µA
I
BIAS_PWM
Bias Current
PWM mode, VBIAS = 5V
0.5
0.70
mA
V
FB
Feedback Voltage
5V < Vin < 38V
1.2155
1.234
1.2525
V
I
FB
FB Bias Current
±200
nA
∆V
OUT/
∆V
IN
Vout line regulation
5V < Vin <38V
0.001
%/V
∆V
OUT/
∆I
OUT
Vout load regulation
0.8 < V
COMP < 1.15V
0.07
%
VDD
VDD output voltage
7 < Vin < 35V, I
VDD=0mAto
5mA
5.50
5.95
6.50
V
I
SS_Source
Soft-start source current
0.9
2.3
3.6
µA
V
bias_th
VBIAS switchover threshold
2.50
2.7
3.05
V
Switching
R
DS(ON)
Switch on Resistance
Isw = 1A
0.12
0.2
0.42
I
sw_off
Switch off state leakage current
Vin = 38V, VSW = 0V
0.002
5.0
µA
f
sw
Switching Frequency
RFREQ = 62k, 124k, 240k
±10
%
V
FREQ
FREQ voltage
1.0
V
f
SW range
Switching Frequency range
150
500
kHz
V
SYNC
Sync pin threshold
SYNC rising
1.2
1.6
V
SYNC falling
0.8
1.1
Sync pin hysteresis
114
mV
I
SYNC
SYNC leakage current
6
nA
F
SYNC_UP
Upper frequency synchronization
range
As compared to nominal f
SW
+30
%
F
SYNC_DN
Lower frequency synchronization
range
As compared to nominal f
SW
-20
%
www.national.com
3


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