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BYP58-100 Fiches technique(PDF) 2 Page - Zetex Semiconductors

No de pièce BYP58-100
Description  35A Silicon Power Rectifier Diode
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Fabricant  ZETEX [Zetex Semiconductors]
Site Internet  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

BYP58-100 Fiches technique(HTML) 2 Page - Zetex Semiconductors

  BYP58-100 Datasheet HTML 1Page - Zetex Semiconductors BYP58-100 Datasheet HTML 2Page - Zetex Semiconductors BYP58-100 Datasheet HTML 3Page - Zetex Semiconductors BYP58-100 Datasheet HTML 4Page - Zetex Semiconductors BYP58-100 Datasheet HTML 5Page - Zetex Semiconductors  
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BYP57 / BYP58
Absolute maximum ratings
(at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Unit
Test condition
BYP57-75
BYP58-75
75
BYP57-100
BYP58-100
100
BYP57-150
BYP58-150
150
BYP57-200
BYP58-200
200
BYP57-300
BYP58-300
300
BYP57-400
BYP58-400
400
BYP57-500
BYP58-500
500
BYP57-600
BYP58-600
600
BYP57-700
BYP58-700
700
Repetitive
peak
reverse
voltage
BYP57-800
BYP58-800
VRRM
800
V
Tc = 140°C
Forward current, arithmetic value
IFAV
35
A
600
half-sine wave,
≤ 10 ms
Surge forward current
IFSM
500
A
TJ = 175°C half-sine
wave,
≤ 10 ms
1800
half-sine wave,
≤ 10 ms
Maximum rated value
∫i²dt
1250
A²s
TJ = 175°C half-sine
wave,
≤ 10 ms
Repetitive peak forward current
IFRM=π*IFAV
110
A
f = >15 Hz
Effective forward current
IFRMS
55
A
Junction temperature
TJmax
175
°C
Storage temperature range
Tstg
- 50 to + 140
°C
Issue 4 – September 2006
2
www.zetex.com
© Zetex Semiconductors plc 2006


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