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Moteur de recherche de fiches techniques de composants électroniques |
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IRLR3915PBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRLR3915PBF Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRLR/U3915PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 30A, VGS = 0V trr Reverse Recovery Time ––– 62 93 ns TJ = 25°C, IF = 30A, VDD = 25xjkl V Qrr Reverse Recovery Charge ––– 110 170 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 12 14 VGS = 10V, ID = 30A ––– 14 17 VGS = 5.0V, ID = 26A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = 10V, ID = 250µA gfs Forward Transconductance 42 ––– ––– S VDS = 25V, ID = 30A ––– ––– 20 µA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 55V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -16V Qg Total Gate Charge ––– 61 92 ID = 30A Qgs Gate-to-Source Charge ––– 9.0 14 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– 17 25 VGS = 10V td(on) Turn-On Delay Time ––– 7.4 ––– VDD = 28V tr Rise Time ––– 51 ––– ID = 30A td(off) Turn-Off Delay Time ––– 83 ––– RG = 8.5Ω tf Fall Time ––– 100 ––– VGS = 10V Between lead, ––– ––– nH 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1870 ––– VGS = 0V Coss Output Capacitance ––– 390 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 74 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 2380 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 290 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 540 ––– VGS = 0V, VDS = 0V to 44V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current S D G Source-Drain Ratings and Characteristics 61 240 A m Ω |
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Description similaire - IRLR3915PBF |
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