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IRF7451PBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRF7451PBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 8 page www.irf.com 1 8/10/04 IRF7451PbF SMPS MOSFET HEXFET® Power MOSFET l High frequency DC-DC converters l Lead-Free Benefits Applications l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max ID 150V 0.09 W 3.6A Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.6 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.9 A IDM Pulsed Drain Current 29 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 7.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Notes through are on page 8 SO-8 Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 50 °C/W Thermal Resistance PD- 95725 |
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