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FDS6679 Fiches technique(PDF) 3 Page - Fairchild Semiconductor |
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FDS6679 Fiches technique(HTML) 3 Page - Fairchild Semiconductor |
3 / 4 page FDS6679 Rev C1 (W) Typical Characteristics 0 10 20 30 40 50 0 0.5 1 1.5 2 -VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -10V -2.5V -3.0V -3.5V -4.0V -4.5V -6.0V 0.6 1 1.4 1.8 2.2 2.6 3 0 1020 3040 50 -ID, DIRAIN CURRENT (A) VGS = -3.0V -4.5V -6.0V -3.5V -4.0V -5.0V -10V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( oC) ID = -13A VGS = -10V 0 0.01 0.02 0.03 0.04 22.533.544.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -7.0A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 10 20 30 40 50 1.5 2 2.5 3 3.5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -125 oC 25 oC -55 oC VDS = -5.0V 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) VGS = 0V TA = 125 oC 25 oC -55 oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Numéro de pièce similaire - FDS6679_05 |
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Description similaire - FDS6679_05 |
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