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FDS6676AS Fiches technique(PDF) 3 Page - Fairchild Semiconductor |
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FDS6676AS Fiches technique(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FDS6676AS Rev B Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.5 A (Note 2) VGS = 0 V, IS = 7 A (Note 2) 0.4 0.5 0.7 V trr Diode Reverse Recovery Time 27 nS IRM Diode Reverse Recovery Current 1.9 A Qrr Diode Reverse Recovery Charge IF = 14.5A, diF/dt = 300 A/µs (Note 3) 26 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when mounted on a 1 in 2 pad of 2 oz copper b) 105°/W when mounted on a .04 in 2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. See “SyncFET Schottky body diode characteristics” below Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. FDS6676AS_NL is a lead free product. The FDS6676AS_NL marking will appear on the reel label. |
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