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FDS2670 Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FDS2670 Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page August 2001 2001 Fairchild Semiconductor Corporation FDS2670 Rev C1(W) FDS2670 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 3.0 A, 200 V. R DS(ON) = 130 m Ω @ V GS = 10 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability S D S S SO-8 D D D G 6 7 8 5 3 2 1 4 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 200 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 3.0 A – Pulsed 20 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1.0 W dv/dt Peak Diode Recovery dv/dt (Note 3) 3.2 V/ns TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS2670 FDS2670 13’’ 12mm 2500 units |
Numéro de pièce similaire - FDS2670_01 |
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Description similaire - FDS2670_01 |
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