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2N5151L Fiches technique(PDF) 2 Page - Microsemi Corporation

No de pièce 2N5151L
Description  PNP POWER SILICON TRANSISTOR
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Fabricant  MICROSEMI [Microsemi Corporation]
Site Internet  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N5151L Fiches technique(HTML) 2 Page - Microsemi Corporation

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2N5151, 2N5153 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 5 Vdc
2N5151
2N5153
IC = 2.5 Adc, VCE = 5 Vdc
2N5151
2N5153
IC = 5 Adc, VCE = 5 Vdc
2N5151
2N5153
hFE
20
50
30
70
20
40
90
200
Collector-Emitter Saturation Voltage
IC = 2.5 Adc, IB = 250 Adc
IC = 5 Adc, IB = 500 Adc
VCE(sat)
0.75
1.5
Vdc
Base-Emitter Voltage nonsaturated
VCE = 5 Vdc, IC = 2.5 Adc
VBE
1.45
Vdc
Base-Emitter Saturation Voltage
IC = 2.5 Adc, IB = 250 mAdc
IC = 5 Adc, IB = 500 mAdc
VBE(sat)
1.45
2.2
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal
Short Circuit
Forward-Current Transfer Ratio
IC = 500 mAdc, VCE = 5 Vdc, f = 10 MHz
2N5151
2N5153
h
fe
6
7
Common-Emitter Small-Signal Short-Circuit
Forward-Current Transfer Ratio
IC = 100 mAdc, VCE = 5 Vdc, f = 1 kHz
2N5151
2N5151
hfe
20
50
Output Capacitance
VCB = 10 Vdc, IE = 0, f = 1.0 MHz
Cobo
250
pF
SWITCHING CHARACTERISTICS
Turn-On Time
IC = 5 Adc, IB1= 500 mAdc
ton
0.5
µs
Turn-Off Time
RL = 6
toff
1.5
µs
Storage Time
IB2 = -500 mAdc
ts
1.4
µs
Fall Time
V BE(OFF) = 3.7 Vdc
tf
0.5
µs
SAFE OPERATING AREA
DC Tests
TC = +25
0C, 1 Cycle, t p= 1.0 s
Test 1
VCE = 5.8Vdc, IC = 2.0 Adc
Test 2
VCE = 32 Vdc, IC = 340 mAdc
Test 3
VCE = 80 Vdc, IC = 20 mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


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