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2N4234 Fiches technique(PDF) 1 Page - Microsemi Corporation

No de pièce 2N4234
Description  NPN POWER AMPLIFIER SILICON TRANSISTOR
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Fabricant  MICROSEMI [Microsemi Corporation]
Site Internet  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N4234 Fiches technique(HTML) 1 Page - Microsemi Corporation

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TECHNICAL DATA
NPN POWER AMPLIFIER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/580
Devices
Qualified Level
2N4234
2N4235
2N4236
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N4234 2N4235 2N4236 Units
Collector-Emitter Voltage
VCEO
40
60
80
Vdc
Collector-Base Voltage
VCBO
40
60
80
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Collector Current
IC
1.0
Adc
Base Current
IB
0.5
Adc
Total Power Dissipation
@TA = 25
0C(1)
@TC = 25
0C(2)
PT
1.0
6.0
W
Operating & Storage Junction Temperature
TJ, Tstg
-65 to +200
0C
1)
Derate linearly 5.7 mW/
0C for TA > +250C
2)
Derate linearly 34 mW/
0C for TC > +250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N4234
2N4235
2N4236
V(BR)CEO
40
60
80
Vdc
Collector-Emitter Cutoff Current
VCE = 30 Vdc
2N4234
VCE = 40 Vdc
2N4235
VCE = 60 Vdc
2N4236
ICEO
1.0
1.0
1.0
mAdc
Collector-Emitter Cutoff Current
VCE = 40 Vdc, VBE = 1.5 Vdc
2N4234
VCE = 60 Vdc, VBE = 1.5 Vdc
2N4235
VCE = 80 Vdc, VBE = 1.5 Vdc
2N4236
ICEX
100
100
100
ηAdc
Collector-Base Cutoff Current
VCE = 40 Vdc
2N4234
VCE = 60 Vdc
2N4235
VCE = 80 Vdc
2N4236
ICBO
100
100
100
ηAdc
Emitter-Base Cutoff Current
VBE = 7.0 Vdc
IEBO
0.5
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
TO-39*
(TO-205AD)


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