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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF3808PBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRF3808PBF Fiches technique(HTML) 1 Page - International Rectifier |
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1 / 9 page  IRF3808PbF HEXFET® Power MOSFET Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest process- ing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low R θJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications. S D G Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 140 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 97 A IDM Pulsed Drain Current 550 PD @TC = 25°C Power Dissipation 330 W Linear Derating Factor 2.2 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 430 mJ IAR Avalanche Current 82 A EAR Repetitive Avalanche Energy See Fig.12a, 12b, 15, 16 mJ dv/dt Peak Diode Recovery dv/dt 5.5 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.45 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance VDSS = 75V RDS(on) = 0.007Ω ID = 140A Description 02/02/04 www.irf.com 1 ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax Benefits Typical Applications ● Integrated Starter Alternator ● 42 Volts Automotive Electrical Systems AUTOMOTIVE MOSFET PD - 94972 TO-220AB HEXFET(R) is a registered trademark of International Rectifier. ● Lead-Free |
Numéro de pièce similaire - IRF3808PBF |
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Description similaire - IRF3808PBF |
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