Moteur de recherche de fiches techniques de composants électroniques
Selected language     French  ▼
Nom de la pièce
         Description


IRF3205L Datasheet(Fiches technique) 1 Page - International Rectifier

Numéro de pièce IRF3205L
Description  HEXFET Power MOSFET
Télécharger  10 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo 

 
 1 page
background image
IRF3205S
IRF3205L
HEXFET® Power MOSFET
09/06/02
Thermal Resistance
www.irf.com
1
VDSS = 55V
RDS(on) = 8.0mΩ
ID = 110A…
S
D
G
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area.
This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing surface
mount package. The D2Pak is suitable for high current applications
because of its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF3205L) is available for low-profile
applications.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
D2Pak
IRF3205S
TO-262
IRF3205L
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
°C/W
RθJA
Junction-to-Ambient (PCB mounted, steady-state)
*
–––
40
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
110
…
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
80
A
IDM
Pulsed Drain Current

390
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
IAR
Avalanche Current

62
A
EAR
Repetitive Avalanche Energy

20
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
PD - 94149A




Html Pages

1  2  3  4  5  6  7  8  9  10 


Datasheet Download



Numéro de composants électroniques

Numéro de pièceDescription des composantsHtml ViewFabricant
IRFZ34VPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF7210PBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFR210PBFHEXFET POWER MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFR3707ZCPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRLZ4SHEXFET POWER MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFC240HEXFET Power MOSFET Die in Wafer Form 1 International Rectifier
IRF8010PBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFS4321PBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF9952PBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF3704ZCSPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier

Lien URL

AllDATASHEET vous a-t-il été utile ?   [ DONATE ]  

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Favoris   |   Echange de liens   |   Fabricants
All Rights Reserved © Alldatasheet.com 2003 - 2017    


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl