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AM29BDS128H Fiches technique(PDF) 74 Page - Advanced Micro Devices

No de pièce AM29BDS128H
Description  128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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Fabricant  AMD [Advanced Micro Devices]
Site Internet  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29BDS128H Fiches technique(HTML) 74 Page - Advanced Micro Devices

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Am29BDS128H/Am29BDS640H
27024B3 May 10, 2006
D A TA
SH EE T
AC CHARACTERISTICS
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. Amax–A12 are don’t care during command sequence unlock cycles.
4. Addresses are latched on the first of either the rising edge of AVD# or the active edge of CLK.
5. Either CE# or AVD# is required to go from low to high in between programming command sequences.
6. The Synchronous programming operation is dependent of the Set Device Read Mode bit in the Configuration Register. The
Configuration Register must be set to the Synchronous Read Mode.
Figure 36.
Synchronous Program Operation Timings: WE# Latched Addresses
OE#
CE#f
Data
Addresses
AVD#
WE#
CLK
VCCf
555h
PD
tWC
tWPH
tWP
PA
tVCS
tDH
tCH
In
Progress
tWHWH1
VA
Complete
VA
Program Command Sequence (last two cycles)
Read Status Data
tDS
tAVDP
A0h
tACS
tCAS
tACH
tAVCH
tCSW


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