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2N3663 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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2N3663 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page NPN RF Transistor (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 12 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, I E = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, I C = 0 3.0 V ICBO Collector-Cutoff Current VCB = 15 V, IE = 0 0.5 µA IEBO Emitter-Cutoff Current VEB = 2.0 V, IC = 0 0.5 µA ON CHARACTERISTICS* hFE DC Current Gain VCE = 10 V, IC = 8.0 mA 20 *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 5.0 mA, VCE = 10 V, f = 100 MHz 700 2100 MHz Cob Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.8 1.7 pF rb’CC Collector Base Time Constant IC = 8.0 mA, VCE = 10 V, f = 79.8 MHz 80 pS FUNCTIONAL TEST NF Noise Figure IC = 1.0 mA, VCE = 6.0 V, f = 60 MHz, Rg = 400 Ω 6.5 dB Gpe Amplifier Power Gain IC = 6.0 mA, VCE = 12 V, f = 200 MHz 1.5 dB |
Numéro de pièce similaire - 2N3663_01 |
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Description similaire - 2N3663_01 |
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