December 1994

2

Philips Semiconductors

Product specification

NPN silicon planar epitaxial

microwave power transistor

LFE18500X

FEATURES

• Diffused emitter ballasting resistors

providing excellent current sharing

and withstanding a high VSWR

• Interdigitated structure provides

high emitter efficiency

• Gold metallization realizes very

good stability of the characteristics

and excellent lifetime

• Multicell geometry gives good

balance of dissipated power and

low thermal resistance

• Internal input and output

prematching ensures good stability

and allows an easier design of

wideband circuits.

APPLICATION

Intended for use in common emitter,

class AB amplifiers in CW conditions

for professional applications between

1.8 GHz and 1.9 GHz.

DESCRIPTION

NPN silicon planar epitaxial

microwave power transistor in a

FO-231 glued cap metal ceramic

flange package, with emitter

connected to flange.

QUICK REFERENCE DATA

amplifier.

PINNING - FO-231

MODE OF

OPERATION

f

(GHz)

(V)

(A)

(W)

(dB)

(%)

(

Ω)

Class AB

(CW)

1.85

24

0.2

≥48

≥7

typ. 42

see Figs 7

and 8

PIN

DESCRIPTION

1

collector

2

base

3

emitter connected to flange

Fig.1 Simplified outline and symbol.

handbook, 4 columns

e

c

b

MAM045 - 1

1

2

Top view

3

3

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.