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IRLZ34N Fiches technique(PDF) 5 Page - NXP Semiconductors

No de pièce IRLZ34N
Description  N-channel enhancement mode Logic level TrenchMOS transistor
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

IRLZ34N Fiches technique(HTML) 5 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
N-channel enhancement mode
IRLZ34N
Logic level TrenchMOS
TM transistor
Fig.11. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Fig.12. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG); conditions: ID = 30 A; parameter VDS
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Normalised avalanche energy rating.
W
DSS% = f(Tmb); conditions: ID = 20 A
Fig.16. Avalanche energy test circuit.
0
0.5
1
1.5
2
2.5
3
1E-05
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
2%
typ
98%
0
0.5
1
1.5
0
20
40
60
80
100
IF/A
VSDS/V
Tj/C =
175
25
0.01
0.1
1
10
100
0
0.5
1.0
1.5
2.0
2.5
Ciss
Coss
Crss
VDS/V
20
40
60
80
100
120
140
160
180
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
5
10
15
20
25
0
1
2
3
4
5
6
VGS/V
QG/nC
VDS = 14V
VDS = 44V
L
T.U.T.
VDD
RGS
R 01
VDS
-ID/100
+
-
shunt
VGS
0
W
DSS = 0.5 ⋅ LID
2
⋅ BV
DSS/(BVDSS − VDD)
February 1999
5
Rev 1.000


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