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IRF830 Fiches technique(PDF) 1 Page - NXP Semiconductors

No de pièce IRF830
Description  PowerMOS transistor Avalanche energy rated
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

IRF830 Fiches technique(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
PowerMOS transistor
IRF830
Avalanche energy rated
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Repetitive Avalanche Rated
• Fast switching
V
DSS = 500 V
• High thermal cycling performance
• Low thermal resistance
I
D = 5.9 A
R
DS(ON) ≤ 1.5 Ω
GENERAL DESCRIPTION
PINNING
SOT78 (TO220AB)
N-channel,
enhancement
mode
PIN
DESCRIPTION
field-effect
power
transistor,
intended for use in off-line switched
1
gate
mode power supplies, T.V. and
computer monitor power supplies,
2
drain
d.c. to d.c. converters, motor control
circuits
and
general
purpose
3
source
switching applications.
tab
drain
The IRF830 is supplied in the
SOT78 (TO220AB) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 ˚C to 150˚C
-
500
V
V
DGR
Drain-gate voltage
T
j = 25 ˚C to 150˚C; RGS = 20 kΩ
-
500
V
V
GS
Gate-source voltage
-
± 30
V
I
D
Continuous drain current
T
mb =
25 ˚C; V
GS = 10 V
-
5.9
A
T
mb = 100 ˚C; VGS = 10 V
-
3.7
A
I
DM
Pulsed drain current
T
mb = 25 ˚C
-
24
A
P
D
Total dissipation
T
mb = 25 ˚C
-
125
W
T
j, Tstg
Operating junction and
- 55
150
˚C
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
AS = 4.2 A;
-
287
mJ
energy
t
p = 0.21 ms; Tj prior to avalanche = 25˚C;
V
DD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer
to fig:17
E
AR
Repetitive avalanche energy
1
I
AR = 5.9 A; tp = 2.5 µs; Tj prior to
-
10
mJ
avalanche = 25˚C; R
GS = 50 Ω; VGS = 10 V;
refer to fig:18
I
AS, IAR
Repetitive and non-repetitive
-
5.9
A
avalanche current
d
g
s
12 3
tab
1 pulse width and repetition rate limited by T
j max.
March 1999
1
Rev 1.000


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