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IRF830 Fiches technique(PDF) 1 Page - NXP Semiconductors |
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IRF830 Fiches technique(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product specification PowerMOS transistor IRF830 Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA • Repetitive Avalanche Rated • Fast switching V DSS = 500 V • High thermal cycling performance • Low thermal resistance I D = 5.9 A R DS(ON) ≤ 1.5 Ω GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel, enhancement mode PIN DESCRIPTION field-effect power transistor, intended for use in off-line switched 1 gate mode power supplies, T.V. and computer monitor power supplies, 2 drain d.c. to d.c. converters, motor control circuits and general purpose 3 source switching applications. tab drain The IRF830 is supplied in the SOT78 (TO220AB) conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DSS Drain-source voltage T j = 25 ˚C to 150˚C - 500 V V DGR Drain-gate voltage T j = 25 ˚C to 150˚C; RGS = 20 kΩ - 500 V V GS Gate-source voltage - ± 30 V I D Continuous drain current T mb = 25 ˚C; V GS = 10 V - 5.9 A T mb = 100 ˚C; VGS = 10 V - 3.7 A I DM Pulsed drain current T mb = 25 ˚C - 24 A P D Total dissipation T mb = 25 ˚C - 125 W T j, Tstg Operating junction and - 55 150 ˚C storage temperature range AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT E AS Non-repetitive avalanche Unclamped inductive load, I AS = 4.2 A; - 287 mJ energy t p = 0.21 ms; Tj prior to avalanche = 25˚C; V DD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer to fig:17 E AR Repetitive avalanche energy 1 I AR = 5.9 A; tp = 2.5 µs; Tj prior to - 10 mJ avalanche = 25˚C; R GS = 50 Ω; VGS = 10 V; refer to fig:18 I AS, IAR Repetitive and non-repetitive - 5.9 A avalanche current d g s 12 3 tab 1 pulse width and repetition rate limited by T j max. March 1999 1 Rev 1.000 |
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Description similaire - IRF830 |
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