Specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Tel: +44 (0) 1325 301111

Fax: +44 (0) 1325 306177

Email: sales@filcs.com

FMA3018QFN

Preliminary Datasheet v2.1

Notes:

1.

cause permanent damage to the device

2.

Information on the mounting of QFN style packages for optimum thermal performance is available on

request.

•

The BA1500QFN module is a self-biased circuit, which employ an RF-bypassed source resistor to

provide the negative Gate-Source bias voltage, and such circuits provide some temperature

stabilization for the device

0.5

1

1.5

2

2.5

3

Frequency (GHz)

S21 (dB)

0

5

10

15

20

0.511.522.53

Frequency (GHz)

Return Loss (dB)

-40

-30

-20

-10

0

S11

S22

1.61.7

1.81.9

2

2.1

Frequency (GHz)

NF (dB)

1

1.5

2

2.5

3

1.7

1.8

1.9

2

Frequency (GHz)

IIP3 LO (dBm)

23

24

25

26

27

28

Note: NF can be centred by optimising printed inductive elements

Drain-Source Voltage

VDS

5

8V

Channel Operating Temperature

TCH

Under any acceptable bias state

175°C

Storage Temperature

TSTG

Non-Operating Storage

-55°C to 150°C

2