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BYQ30EB-150 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BYQ30EB-150 Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 8 page Philips Semiconductors Product specification Rectifier diodes BYQ30E, BYQ30EB, BYQ30ED series ultrafast, rugged Fig.1. Definition of t rr1, Qs and Irrm Fig.2. Definition of V fr Fig.3. Maximum forward dissipation P F = f(IF(AV)) per diode; square current waveform where I F(AV) =IF(RMS) x √D. Fig.4. Circuit schematic for t rr2 Fig.5. Definition of t rr2 Fig.6. Maximum forward dissipation P F = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = I F(RMS) / IF(AV). Q s 100% 10% time dI dt F I R I F I rrm t rr shunt Current to ’scope D.U.T. Voltage Pulse Source R time time V F V fr V F I F I = 1A R rec I = 0.25A 0A trr2 0.5A IF IR 02468 10 12 0 2 4 6 8 10 12 0.5 0.2 0.1 BYQ30 Rs = 0.025 Ohms Vo = 0.75 V Average forward current, IF(AV) (A) Forward dissipation, PF (W) Tmb(max) / C 150 144 138 132 126 120 114 D = 1.0 D = tp tp T T t I 01 23 4 5 6 7 8 0 2 4 6 8 10 12 a = 1.57 1.9 2.2 2.8 4 BYQ30 Rs 0.025 Ohms Vo = 0.75 V Average forward current, IF(AV) (A) Forward dissipation, PF (W) Tmb(max) / C 150 144 138 132 126 120 114 October 1998 3 Rev 1.200 |
Numéro de pièce similaire - BYQ30EB-150 |
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Description similaire - BYQ30EB-150 |
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