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BYQ28F-150 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BYQ28F-150 Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 7 page Philips Semiconductors Product specification Rectifier diodes BYQ28F, BYQ28EX series ultrafast, rugged Fig.1. Definition of t rr1, Qs and Irrm Fig.2. Definition of V fr Fig.3. Circuit schematic for t rr2 Fig.4. Definition of t rr2 Fig.5. Maximum forward dissipation P F = f(IF(AV)) per diode; square current waveform where I F(AV) =IF(RMS) x √D. Fig.6. Maximum forward dissipation P F = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = I F(RMS) / IF(AV). Q s 100% 10% time dI dt F I R I F I rrm t rr I = 1A R rec I = 0.25A 0A trr2 0.5A IF IR time time V F V fr V F I F 01 23 456 78 0 1 2 3 4 5 6 7 8 D = 1.0 0.5 0.2 0.1 BYQ28 IF(AV) / A PF / W Ths(max) / C 150 144.3 138.6 132.9 127.2 121.5 115.8 110.1 104.4 D = tp tp T T t I Vo = 0.748 V Rs = 0.0293 Ohms shunt Current to ’scope D.U.T. Voltage Pulse Source R 01234 56 0 1 2 3 4 5 6 a = 1.57 1.9 2.2 2.8 4 BYQ28 IF(AV) / A PF / W Ths(max) / C 150 144.3 138.6 132.9 127.2 121.5 115.8 Vo = 0.748 V Rs = 0.0293 Ohms October 1998 3 Rev 1.300 |
Numéro de pièce similaire - BYQ28F-150 |
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Description similaire - BYQ28F-150 |
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