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BYM56B Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BYM56B Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 1996 May 24 3 Philips Semiconductors Product specification Controlled avalanche rectifiers BYM56 series ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9. For more information please refer to the “General Part of associated Handbook”. ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off − 20 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.5 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF =3A; Tj =Tj max; see Fig.6 −− 0.95 V IF = 3 A; see Fig.6 −− 1.15 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYM56A 225 −− V BYM56B 450 −− V BYM56C 650 −− V BYM56D 900 −− V BYM56E 1100 −− V IR reverse current VR =VRRMmax; see Fig.7 −− 1 µA VR =VRRMmax; Tj = 165 °C; see Fig.7 −− 150 µA trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 − 3 − µs Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.8 − 90 − pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W Rth j-a thermal resistance from junction to ambient note 1 75 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT |
Numéro de pièce similaire - BYM56B |
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Description similaire - BYM56B |
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