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BYG80J Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BYG80J Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 20 page 1997 Nov 25 2 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYG80 series FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • UL 94V-O classified plastic package • Shipped in 12 mm embossed tape. DESCRIPTION DO-214AC surface mountable package with glass passivated chip. The well-defined void-free case is of a transfer-moulded thermo-setting plastic. Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. handbook, 4 columns MSA474 Top view Side view cathode band ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYG80A − 50 V BYG80B − 100 V BYG80C − 150 V BYG80D − 200 V BYG80F − 300 V BYG80G − 400 V BYG80J − 600 V VR continuous reverse voltage BYG80A − 50 V BYG80B − 100 V BYG80C − 150 V BYG80D − 200 V BYG80F − 300 V BYG80G − 400 V BYG80J − 600 V IF(AV) average forward current Ttp = 100 °C; see Figs 2, 3 and 4 averaged over any 20 ms period; see also Figs 17, 18 and 19 BYG80A to D − 2.4 A BYG80F; BYG80G − 2.3 A BYG80J − 2.0 A IF(AV) average forward current Tamb =60 °C; AL2O3 PCB mounting (see Fig.27); see Figs 5, 6 and 7 averaged over any 20 ms period; see also Figs 17, 18 and 19 BYG80A to D − 1.25 A BYG80F; BYG80G − 1.15 A BYG80J − 0.95 A |
Numéro de pièce similaire - BYG80J |
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Description similaire - BYG80J |
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