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MC33033DWR2G Fiches technique(PDF) 5 Page - ON Semiconductor |
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MC33033DWR2G Fiches technique(HTML) 5 Page - ON Semiconductor |
5 / 27 page MC33033, NCV33033 http://onsemi.com 5 ELECTRICAL CHARACTERISTICS (continued) (VCC = 20 V, RT = 4.7 k, CT = 10 nF, TA = 25°C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OSCILLATOR SECTION Oscillator Frequency fOSC 22 25 28 kHz Frequency Change with Voltage (VCC = 10 V to 30 V) ΔfOSC/ΔV − 0.01 5.0 % Sawtooth Peak Voltage VOSC(P) − 4.1 4.5 V Sawtooth Valley Voltage VOSC(V) 1.2 1.5 − V LOGIC INPUTS Input Threshold Voltage (Pins 3, 4, 5, 6, 18, 19) High State Low State VIH VIL 3.0 − 2.2 1.7 − 0.8 V Sensor Inputs (Pins 4, 5, 6) High State Input Current (VIH = 5.0 V) Low State Input Current (VIL = 0 V) IIH IIL −150 −600 −70 −337 −20 −150 μA Forward/Reverse, 60 °/120° Select and Output Enable (Pins 3, 18, 19) High State Input Current (VIH = 5.0 V) Low State Input Current (VIL = 0 V) IIH IIL −75 −300 −36 −175 −10 −75 μA CURRENT−LIMIT COMPARATOR Threshold Voltage Vth 85 101 115 mV Input Common Mode Voltage Range VICR − 3.0 − V Input Bias Current IIB − −0.9 −5.0 μA OUTPUTS AND POWER SECTIONS Top Drive Output Sink Saturation (ISink = 25 mA) VCE(sat) − 0.5 1.5 V Top Drive Output Off−State Leakage (VCE = 30 V) IDRV(leak) − 0.06 100 μA Top Drive Output Switching Time (CL = 47 pF, RL = 1.0 k) Rise Time Fall Time tr tf − − 107 26 300 300 ns Bottom Drive Output Voltage High State (VCC = 30 V, Isource = 50 mA) Low State (VCC = 30 V, Isink = 50 mA) VOH VOL (VCC − 2.0) − (VCC − 1.1) 1.5 − 2.0 V Bottom Drive Output Switching Time (CL = 1000 pF) Rise Time Fall Time tr tf − − 38 30 200 200 ns Under Voltage Lockout Drive Output Enabled (VCC Increasing) Hysteresis Vth(on) VH 8.2 0.1 8.9 0.2 10 0.3 V Power Supply Current ICC − 15 22 mA |
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