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MHV5IC2215NR2 Fiches technique(PDF) 1 Page - Freescale Semiconductor, Inc |
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MHV5IC2215NR2 Fiches technique(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 19 page MHV5IC2215NR2 1 RF Device Data Freescale Semiconductor RF LDMOS Wideband Integrated Power Amplifier The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s High Voltage (28 Volts) LDMOS IC technology and integrates a two - stage structure. Its wideband on - chip matching design makes it usable from 1500 to 2200 MHz. The linearity performances cover all modulation formats for cellular applications including TD-SCDMA. Driver Application • Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Full Frequency Band (1930- 1990 MHz), IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 27.5 dB ACPR @ 885 kHz Offset — -60 dBc in 30 kHz Bandwidth • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Full Frequency Band (2130- 2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 24 dB ACPR @ 5 MHz Offset — -55 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 15 Watts CW Output Power • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters Features • On-Chip Matching (50 Ohm Input, >5 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • On-Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel 1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987. Document Number: MHV5IC2215N Rev. 3, 1/2007 Freescale Semiconductor Technical Data MHV5IC2215NR2 CASE 978-03 PFP -16 2170 MHz, 23 dBm, 28 V SINGLE N-CDMA, SINGLE W-CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER 16 1 Note: Exposed backside flag is source terminal for transistors. 16 15 14 13 12 11 10 1 2 3 4 5 6 7 8 (Top View) 9 N.C. VRD1 VRG1 VDS1 GND VGS1 VGS2 N.C. VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout N.C. RFin VGS1 RFin VDS1 VGS2 VDS2/RFout 2 Stage IC Quiescent Current Temperature Compensation VRD1 VRG1 Figure 1. Block Diagram Figure 2. Pin Connections © Freescale Semiconductor, Inc., 2007. All rights reserved. |
Numéro de pièce similaire - MHV5IC2215NR2_07 |
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Description similaire - MHV5IC2215NR2_07 |
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