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SP5848 Fiches technique(PDF) 4 Page - Zarlink Semiconductor Inc |
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SP5848 Fiches technique(HTML) 4 Page - Zarlink Semiconductor Inc |
4 / 10 page 3 SP5848 Preliminary Information Electrical Characteristics (continued) Tamb= -40 o C to +80 o C, Vcc = 4.5 to 5.5 V, These characteristics are guaranteed by either production test or design. They apply within the specified ambient temperature and supply voltage unless otherwise stated. Characteristic Pin Value Units Conditions Min Typ Max Synthesiser 2 (DOWN) RF2 input voltage 5,6 30 300 mV rms 80 -1300MHz RF2 input impedance 5,6 See Figure 5 RF2 division ratio 240 65535 Reference division 2 See Table 2 ratio Comparison frequency 2 16.25 4000 KHz Phase noise degrades above 250KHz Equivalent phase noise -144 dBc/Hz SSB, within loop bandwidth, all at phase detector 2 comparison frequencie up to 250KHz Charge pump 2 output 2 See Table 4 current Vpin 2=2V Charge pump 2 output 2 ±3 ±10 nA Vpin2 = 2V leakage Charge pump 2 drive 3 0.5 mA Vpin 3 = 0.7V output curent Data, clock and enable 12,11,13 Input high voltage 3 Vcc V Input low voltage 0 0.7 V Input current -10 10 µA All input conditions hysterysis 0.8 Vpp Clock rate 11 500 KHz Bus timing - Data set up 300 ns Data hold 600 ns Enable setup 300 ns Enable hold 600 ns Clock to enable 300 ns Reference Oscillator Crystal frequency 8, 9 2 16 MHz See Figure 6 for application External reference input 8 2 20 MHz Sinewave coupled through frequency 10nF blocking capacitor External reference drive 8 0.2 0.5 Vpp Sinewave coupled through 10nF blocking capacitor Outputs ports P0 - P1 1, 20 See note 1 sink current 2 mA Vport = 0.7V leakage current 10 µA Vport = Vcc Note 1 Output ports high impedance on power up, with data, clock and enable at logic 0 |
Numéro de pièce similaire - SP5848 |
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Description similaire - SP5848 |
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