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2SK2094 Fiches technique(PDF) 1 Page - Rohm |
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2SK2094 Fiches technique(HTML) 1 Page - Rohm |
1 / 5 page 2SK2094 Transistors Rev.A 1/4 4V Drive Nch MOS FET 2SK2094 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET CPT3 (1)Gate (2)Drain (3)Source 6.5 2.3 (2) (3) 0.65 (1) 0.75 2.3 0.9 5.1 2.3 0.5 1.0 0.5 Abbreviated symbol : K2094 Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching Packaging specifications Inner circuit (1) Gate (2) Drain (3) Source (1) (2) (3) TL 2500 2SK2094 Type Package Code Basic ordering unit (pieces) Taping Absolute maximum ratings (Ta=25 °C) VDSS VGSS IDR PD Tch 60 V V A A W °C ±20 2 ID IDRP∗ A IDP∗ A 8 2 8 10 150 Tstg °C −55 to +150 Symbol Limits Unit Parameter ∗ Pw ≤ 300µs, Duty cycle ≤ 2% Drain-source voltage Gate-source voltage Drain current Reverse drain current Total power dissipation(Tc=25 °C) Channel temperature Storage temperature Continuous Pulsed Continuous Pulsed |
Numéro de pièce similaire - 2SK2094 |
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Description similaire - 2SK2094 |
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