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PZT2222A Fiches technique(PDF) 5 Page - Unisonic Technologies |
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PZT2222A Fiches technique(HTML) 5 Page - Unisonic Technologies |
5 / 6 page PZT2222A NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 5 of 6 www.unisonic.com.tw QW-R207-001,B TYPICAL CHARACTERISTICS 0.1 1 10 100 300 200 0 Collector Current, IC (mA) DC Current Gain vs. Collector Current 100 0.3330 300 400 500 125℃ 25℃ -40℃ VCE =5V 0.1 0.3 100 110 500 Collector-Emitter Saturation Voltage vs. Collector Current 0.2 0.4 Collector Current, IC (mA) 25℃ -40℃ β=10 125℃ 0.4 0.8 100 110 500 Base-Emitter Saturation Voltage vs. Collector Current 0.6 1 Collector Current, IC (mA) 125℃ β=10 -40℃ 25℃ 0.4 0.8 10 0.1 1 25 Base-Emitter On Voltage vs. Collector Current 0.6 1 Collector Current, IC (mA) VCE =5V 0.2 25℃ -40℃ 125℃ Ambient Temperature, TA(℃) Collector-Cutoff Current vs. Ambient Temperature 500 0.1 75 25 50 100 125 150 100 1 10 VCB=40V 0.1 1 10 100 12 4 Reverse Bias Voltage (V) Emitter Transition and Output Capacitance vs. Reverse Bias Voltage 8 16 20 Cte Cob f=1MHz |
Numéro de pièce similaire - PZT2222A |
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Description similaire - PZT2222A |
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