MKP1V120_06 datasheet(3/5 Pages) ONSEMI

No de pièce	MKP1V120

Description	Sidac High Voltage Bidirectional Triggers 0.9 AMPERES RMS 120 ??240 VOLTS

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Fabricant	ONSEMI [ON Semiconductor]

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MKP1V120 Series

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3

+ Current

+ Voltage

VTM

IH

Symbol

Parameter

IDRM

Off State Leakage Current

VDRM

Off State Repetitive Blocking Voltage

VBO

Breakover Voltage

IBO

Breakover Current

IH

Holding Current

VTM

On State Voltage

ITM

Peak on State Current

Voltage Current Characteristic of SIDAC

VDRM

IDRM

ITM

Slope = RS

V(BO)

R

S +

(V

(BO) –VS)

(I

S –I(BO))

I(BO)

IS

VS

(Bidirectional Device)

0.8

0

IT(RMS), ON−STATE CURRENT (AMPS)

140

120

40

TA, MAXIMUM AMBIENT TEMPERATURE (°C)

0.4

2.0

3.0

0

VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)

0.3

0.5

0.2

0.1

1.0

4.0

0.2

0.6

100

0.7

1.0

130

100

0

1.0

0.6

0.2

40

20

60

0.4

0.8

0.2

0.6

0

IT(RMS), ON−STATE CURRENT (AMPS)

0.50

0.75

0.25

0.4

0.8

1.00

1.25

TJ = 25°C

Conduction Angle = 180

°C

1.6

1.2

1.0

1.4

2.0

1.8

110

90

80

60

70

50

80

120

140

5.0

3.0

5.0

2.0

7.0

10

1.0

TJ = 25°C

125

°C

TJ = 125°C

Sine Wave

Conduction Angle = 180

°C

Assembled in PCB

Lead Length = 3/8″

TJ = 125°C

Sine Wave

Conduction Angle = 180

°C

TL

3/8″

Figure 1. Maximum Lead Temperature

Figure 2. Maximum Ambient Temperature

Figure 3. Typical On−State Voltage

Figure 4. Typical Power Dissipation

Numéro de pièce similaire - MKP1V120_06

Fabricant	No de pièce	Fiches technique	Description
ON Semiconductor	MKP1V120RL	53Kb / 6P	Sidac High Voltage September, 2004 ??Rev. 6

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Description similaire - MKP1V120_06

Fabricant	No de pièce	Fiches technique	Description
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MKP1V120 Fiches technique(PDF) 3 Page - ON Semiconductor

MKP1V120 Fiches technique(HTML) 3 Page - ON Semiconductor

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