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MC100E141FNR2 Fiches technique(PDF) 5 Page - ON Semiconductor

No de pièce MC100E141FNR2
Description  5V ECL 8-Bit Shift Register
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC100E141FNR2 Fiches technique(HTML) 5 Page - ON Semiconductor

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MC10E141, MC100E141
http://onsemi.com
5
Table 9. AC CHARACTERISTICS VCCx = 5.0 V; VEE = 0.0 V or VCCx = 0.0 V; VEE = −5.0 V (Note 9)
Symbol
Characteristic
0°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
fSHIFT
Max. Shift Frequency
700
900
700
900
700
900
MHz
tPLHt
PHL
Propagation Delay To Output
Clk
MR
625
600
750
725
975
975
625
600
750
725
975
975
625
600
750
725
975
975
ps
ts
Setup Time
D
SEL0
SEL1
175
350
300
25
200
150
175
350
300
25
200
150
175
350
300
25
200
150
ps
th
Hold Time
D
SEL0
SEL1
200
100
100
− 25
− 200
−150
200
100
100
− 25
− 200
−150
200
100
100
− 25
− 200
−150
ps
tRR
Reset Recovery Time
900
700
900
700
900
700
ps
tPW
Minimum Pulse Width
Clk, MR
400
400
400
ps
tSKEW
Within-Device Skew (Note 10)
60
60
60
ps
tJITTER
Random Clock Jitter (RMS)
< 1
< 1
< 1
ps
tr
tf
Rise/Fall Times
(20 - 80%)
300
525
800
300
525
800
300
525
800
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
9. 10 Series: VEE can vary −0.46 V / +0.06 V.
100 Series: VEE can vary −0.46 V / +0.8 V.
10.Within-device skew is defined as identical transitions on similar paths through a device.


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