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BC517RL1G Fiches technique(PDF) 2 Page - ON Semiconductor |
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BC517RL1G Fiches technique(HTML) 2 Page - ON Semiconductor |
2 / 6 page BC517 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 2.0 mAdc, IBE = 0) V(BR)CES 30 − − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 40 − − Vdc Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO 10 − − Vdc Collector Cutoff Current (VCE = 30 Vdc) ICES − − 500 nAdc Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO − − 100 nAdc Emitter Cutoff Current (VCB = 10 Vdc, IC = 0) IEBO − − 100 nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 20 mAdc, VCE = 2.0 Vdc) hFE 30,000 − − − Collector −Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) − − 1.0 Vdc Collector −Emitter Saturation Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) VBE(on) − − 1.4 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT − 200 − MHz 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. 2. fT = |hfe| • ftest RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model |
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Description similaire - BC517RL1G |
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