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BAS19LT1 Fiches technique(PDF) 1 Page - ON Semiconductor |
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BAS19LT1 Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2007 January, 2007 − Rev. 9 1 Publication Order Number: BAS19LT1/D BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage BAS19 BAS20 BAS21 VR 120 200 250 Vdc Repetitive Peak Reverse Voltage BAS19 BAS20 BAS21 VRRM 120 200 250 Vdc Continuous Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 625 mAdc Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Power Dissipation (Note 1) PD 385 mW Electrostatic Discharge ESD HM < 500 MM < 400 V V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in. HIGH VOLTAGE SWITCHING DIODE Preferred devices are recommended choices for future use and best overall value. 5 CATHODE 1 ANODE MARKING DIAGRAMS http://onsemi.com 3 CATHODE 1 ANODE 4 CATHODE 3 ANODE SOT−23 (TO−236) CASE 318 STYLE 8 SC−88A (SOT−353) CASE 419A SOT−23 SC−88A ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. 1 2 3 1 Jx M G G x = P, R, or S P = BAS19LT1 R = BAS20LT1 S = BAS21LT1 or BAS21DW5T1 M = Date Code G = Pb−Free Package 2 3 Jx M G G 1 3 3 2 1 4 5 *Date Code orientation and/or overbar may vary depending upon the manufacturing location. (Note: Microdot may be in either location) |
Numéro de pièce similaire - BAS19LT1_07 |
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Description similaire - BAS19LT1_07 |
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