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BUK555-200A Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BUK555-200A Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FET STATIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 200 - - V voltage V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 1.0 1.5 2.0 V I DSS Zero gate voltage drain current V DS = 200 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA I DSS Zero gate voltage drain current V DS = 200 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA I GSS Gate source leakage current V GS = ±10 V; VDS = 0 V - 10 100 nA R DS(ON) Drain-source on-state V GS = 5 V; BUK555-200A - 0.2 0.23 Ω resistance I D = 7 A BUK555-200B - 0.24 0.28 Ω DYNAMIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 25 V; ID = 7 A 8.0 15 - S C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 1600 2000 pF C oss Output capacitance - 180 250 pF C rss Feedback capacitance - 55 80 pF t d on Turn-on delay time V DD = 30 V; ID = 3 A; - 25 40 ns t r Turn-on rise time V GS = 5 V; RGS = 50 Ω; - 45 75 ns t d off Turn-off delay time R gen = 50 Ω - 140 180 ns t f Turn-off fall time - 40 55 ns L d Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - - 14 A current I DRM Pulsed reverse drain current - - - 56 A V SD Diode forward voltage I F = 14 A ; VGS = 0 V - 1.0 1.5 V t rr Reverse recovery time I F = 14 A; -dIF/dt = 100 A/µs; - 200 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 30 V - 0.25 - µC AVALANCHE LIMITING VALUE T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT W DSS Drain-source non-repetitive I D = 14 A ; VDD ≤ 100 V ; - - 100 mJ unclamped inductive turn-off V GS = 5 V ; RGS = 50 Ω energy April 1993 2 Rev 1.100 |
Numéro de pièce similaire - BUK555-200A |
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Description similaire - BUK555-200A |
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