BUK555-200A datasheet(2/7 Pages) PHILIPS

No de pièce	BUK555-200A

Description	PowerMOS transistor Logic level FET

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Fabricant	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product Specification

PowerMOS transistor

BUK555-200A/B

Logic level FET

STATIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA

200

-

V

voltage

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 1 mA

1.0

1.5

2.0

V

I

DSS

Zero gate voltage drain current

V

DS = 200 V; VGS = 0 V; Tj = 25 ˚C

-

1

10

µA

I

DSS

Zero gate voltage drain current

V

DS = 200 V; VGS = 0 V; Tj =125 ˚C

-

0.1

1.0

mA

I

GSS

Gate source leakage current

V

GS = ±10 V; VDS = 0 V

-

10

100

nA

R

DS(ON)

Drain-source on-state

V

GS = 5 V;

BUK555-200A

-

0.2

0.23

Ω

resistance

I

D = 7 A

BUK555-200B

-

0.24

0.28

Ω

DYNAMIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

g

fs

Forward transconductance

V

DS = 25 V; ID = 7 A

8.0

15

-

S

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

1600

2000

pF

C

oss

Output capacitance

-

180

250

pF

C

rss

Feedback capacitance

-

55

80

pF

t

d on

Turn-on delay time

V

DD = 30 V; ID = 3 A;

-

25

40

ns

t

r

Turn-on rise time

V

GS = 5 V; RGS = 50 Ω;

-

45

75

ns

t

d off

Turn-off delay time

R

gen = 50 Ω

-

140

180

ns

t

f

Turn-off fall time

-

40

55

ns

L

d

Internal drain inductance

Measured from contact screw on

-

3.5

-

nH

tab to centre of die

L

d

Internal drain inductance

Measured from drain lead 6 mm

-

4.5

-

nH

from package to centre of die

L

s

Internal source inductance

Measured from source lead 6 mm

-

7.5

-

nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

DR

Continuous reverse drain

-

14

A

current

I

DRM

Pulsed reverse drain current

-

56

A

V

SD

Diode forward voltage

I

F = 14 A ; VGS = 0 V

-

1.0

1.5

V

t

rr

Reverse recovery time

I

F = 14 A; -dIF/dt = 100 A/µs;

-

200

-

ns

Q

rr

Reverse recovery charge

V

GS = 0 V; VR = 30 V

-

0.25

-

µC

AVALANCHE LIMITING VALUE

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

W

DSS

Drain-source non-repetitive

I

D = 14 A ; VDD ≤ 100 V ;

-

100

mJ

unclamped inductive turn-off

V

GS = 5 V ; RGS = 50 Ω

energy

April 1993

2

Rev 1.100

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