BUK555-100A datasheet(3/7 Pages) PHILIPS

No de pièce	BUK555-100A

Description	PowerMOS transistor Logic level FET

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Fabricant	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product Specification

PowerMOS transistor

BUK555-100A/B

Logic level FET

Fig.1. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25 ˚C = f(Tmb)

Fig.2. Normalised continuous drain current.

ID% = 100

⋅I

D/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V

Fig.3. Safe operating area. T

mb = 25 ˚C

I

D & IDM = f(VDS); IDM single pulse; parameter tp

Fig.4. Transient thermal impedance.

Z

th j-mb = f(t); parameter D = tp/T

Fig.5. Typical output characteristics, T

j = 25 ˚C.

I

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance, T

j = 25 ˚C.

R

DS(ON) = f(ID); parameter VGS

0

20

40

60

80

100

120

140

160

180

Tmb / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

1E-07

1E-05

1E-03

1E-01

1E+01

t / s

Zth j-mb / (K/W)

10

1

0.1

0.01

0.001

0

0.5

0.2

0.1

0.05

0.02

BUKx55-lv

D =

tp

T

P

t

D

0

20

40

60

80

100

120

140

160

180

Tmb / C

ID%

Normalised Current Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

2

4

6

8

10

BUK555-100A

VDS / V

50

40

30

20

10

0

3

4

5

7

10

ID / A

VGS / V =

1

10

100

1000

VDS / V

1000

100

10

1

BUK555-100A,B

ID / A

A

tp = 10 us

100 us

1 ms

10 ms

RDS(ON)

=

VDS/ID

100 ms

DC

B

0

20

40

BUK555-100A

ID / A

0.5

0.4

0.3

0.2

0.1

0

2.5

3

3.5

4

4.5

5

10

RDS(ON) / Ohm

VGS / V =

April 1993

3

Rev 1.100

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