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BUK545-100A Fiches technique(PDF) 1 Page - NXP Semiconductors

No de pièce BUK545-100A
Description  PowerMOS transistor Logic level FET
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK545-100A Fiches technique(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product Specification
PowerMOS transistor
BUK545-100A/B
Logic level FET
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
logic level field-effect power
transistor in a plastic full-pack
BUK545
-100A
-100B
envelope.
V
DS
Drain-source voltage
100
100
V
The device is intended for use in
I
D
Drain current (DC)
13
12
A
Switched Mode Power Supplies
P
tot
Total power dissipation
30
30
W
(SMPS), motor control, welding,
T
j
Junction temperature
150
150
˚C
DC/DC and AC/DC converters, and
R
DS(ON)
Drain-source on-state
0.085
0.11
in automotive and general purpose
resistance;
V
GS = 5 V
switching applications.
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
-
100
V
V
DGR
Drain-gate voltage
R
GS = 20 kΩ
-
100
V
±V
GS
Gate-source voltage
-
-
15
V
±V
GSM
Non-repetitive gate-source voltage t
p ≤ 50 µs
-
20
V
-100A
-100B
I
D
Drain current (DC)
T
hs =
25 ˚C
-
13
12
A
I
D
Drain current (DC)
T
hs = 100 ˚C
-
8.2
7.5
A
I
DM
Drain current (pulse peak value)
T
hs =
25 ˚C
-
52
48
A
P
tot
Total power dissipation
T
hs =
25 ˚C
-
30
W
T
stg
Storage temperature
-
- 55
150
˚C
T
j
Junction Temperature
-
-
150
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
4.17
K/W
heatsink
R
th j-a
Thermal resistance junction to
-
55
-
K/W
ambient
12 3
case
d
g
s
April 1993
1
Rev 1.100


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