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BUK545-100A Fiches technique(PDF) 1 Page - NXP Semiconductors |
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BUK545-100A Fiches technique(HTML) 1 Page - NXP Semiconductors |
1 / 8 page Philips Semiconductors Product Specification PowerMOS transistor BUK545-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK545 -100A -100B envelope. V DS Drain-source voltage 100 100 V The device is intended for use in I D Drain current (DC) 13 12 A Switched Mode Power Supplies P tot Total power dissipation 30 30 W (SMPS), motor control, welding, T j Junction temperature 150 150 ˚C DC/DC and AC/DC converters, and R DS(ON) Drain-source on-state 0.085 0.11 Ω in automotive and general purpose resistance; V GS = 5 V switching applications. PINNING - SOT186 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 gate 2 drain 3 source case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS Drain-source voltage - - 100 V V DGR Drain-gate voltage R GS = 20 kΩ - 100 V ±V GS Gate-source voltage - - 15 V ±V GSM Non-repetitive gate-source voltage t p ≤ 50 µs - 20 V -100A -100B I D Drain current (DC) T hs = 25 ˚C - 13 12 A I D Drain current (DC) T hs = 100 ˚C - 8.2 7.5 A I DM Drain current (pulse peak value) T hs = 25 ˚C - 52 48 A P tot Total power dissipation T hs = 25 ˚C - 30 W T stg Storage temperature - - 55 150 ˚C T j Junction Temperature - - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance junction to with heatsink compound - - 4.17 K/W heatsink R th j-a Thermal resistance junction to - 55 - K/W ambient 12 3 case d g s April 1993 1 Rev 1.100 |
Numéro de pièce similaire - BUK545-100A |
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Description similaire - BUK545-100A |
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