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STGF10NB60SD Fiches technique(PDF) 3 Page - STMicroelectronics |
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STGF10NB60SD Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 13 page STGF10NB60SD Electrical ratings 3/13 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGS = 0) 600 V IC Collector current (continuous) at 25°C 20 A IC Collector current (continuous) at 100°C 7 A ICM (1) 1. Pulse width limited by max. junction temperature. Collector current (pulsed) 100 A VGE Gate-emitter voltage ± 20 V PTOT Total dissipation at TC = 25°C 25 W VISO Insulation withstand voltage A.C.(t = 1sec;Tc=25°C) 2500 V Tstg Operating junction temperature – 55 to 150 °C Tj Storage temperature Table 2. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case Max 5 °C/W Rthj-amb Thermal resistance junction-ambient Max 62.5 °C/W |
Numéro de pièce similaire - STGF10NB60SD_06 |
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Description similaire - STGF10NB60SD_06 |
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