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BUK474-200B Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BUK474-200B
Description  PowerMOS transistor Isolated version of BUK454-200A/B
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK474-200B Fiches technique(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
PowerMOS transistor
BUK474-200A/B
STATIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA
200
-
-
V
voltage
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
2.1
3.0
4.0
V
I
DSS
Zero gate voltage drain current
V
DS = 200 V; VGS = 0 V; Tj = 25 ˚C
-
1
10
µA
I
DSS
Zero gate voltage drain current
V
DS = 200 V; VGS = 0 V; Tj =125 ˚C
-
0.1
1.0
mA
I
GSS
Gate source leakage current
V
GS = ±30 V; VDS = 0 V
-
10
100
nA
R
DS(ON)
Drain-source on-state
V
GS = 10 V;
BUK474-200A
-
0.35
0.4
resistance
I
D = 3.5 A
BUK474-200B
-
0.4
0.5
DYNAMIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS = 25 V; ID = 3.5 A
3.5
5.0
-
S
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
700
850
pF
C
oss
Output capacitance
-
100
160
pF
C
rss
Feedback capacitance
-
50
80
pF
t
d on
Turn-on delay time
V
DD = 30 V; ID = 2.9 A;
-
12
20
ns
t
r
Turn-on rise time
V
GS = 10 V; RGS = 50 Ω;
-
45
70
ns
t
d off
Turn-off delay time
R
gen = 50 Ω
-
80
120
ns
t
f
Turn-off fall time
-
40
60
ns
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
-
-
5.3
A
current
I
DRM
Pulsed reverse drain current
-
-
-
21
A
V
SD
Diode forward voltage
I
F = 5.3 A ; VGS = 0 V
-
1.1
1.3
V
t
rr
Reverse recovery time
I
F = 5.3 A; -dIF/dt = 100 A/µs;
-
150
-
ns
Q
rr
Reverse recovery charge
V
GS = 0 V; VR = 30 V
-
0.9
-
µC
April 1998
2
Rev 1.100


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