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STD55NH2LLT4 Fiches technique(PDF) 3 Page - STMicroelectronics |
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STD55NH2LLT4 Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 16 page STD55NH2LL - STD55NH2LL-1 Electrical ratings 3/16 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit Vspike (1) 1. Garanted when external Rg=4.7 Ω and tf < tfmax. Drain-source voltage rating 30 V VDS Drain-source voltage (VGS = 0) 24 V VDGR Drain-gate voltage (RGS = 20 kΩ)24 V VGS Gate- source voltage ± 16 V ID (2) 2. Value limited by wire bonding Drain current (continuous) at TC = 25°C 40 A ID (2) Drain current (continuous) at TC = 100°C 28 A IDM (3) 3. Pulse width limited by safe operating area. Drain current (pulsed) 160 A Ptot Total dissipation at TC = 25°C 60 W Derating Factor 0.4 W/°C EAS (4) 4. Starting Tj = 25 °C, ID = 20A, VDD = 15V Single pulse avalanche energy 600 mJ Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature Table 2. Thermal data Rthj-case Thermal resistance junction-case max 2.5 °C/W Rthj-amb Thermal resistance junction-ambient max 100 °C/W TJ Maximum lead temperature for soldering purpose 275 °C |
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