2N4923G datasheet(5/6 Pages) ONSEMI

No de pièce	2N4923G

Description	Medium?뭁ower Plastic NPN Silicon Transistors

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Fabricant	ONSEMI [ON Semiconductor]

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5 / 6 page

2N4921, 2N4922, 2N4923

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5

1000

2.0

Figure 8. Current Gain

IC, COLLECTOR CURRENT (mA)

10

3.0 5.0

10

20 30

200 300 500

2000

500

200

100

70

Figure 9. Collector Saturation Region

1.0

0.2

IB, BASE CURRENT (mA)

0

0.3 0.5

1.0

2.0

5.0

10

20

50

200

0.8

0.6

0.4

0.2

IC = 0.1 A

TJ = 25°C

0.25 A

0.5 A

1.0 A

700

300

TJ = 150°C

25°C

−55 °C

VCE = 1.0 V

50

30

20

50

100

1000

3.0

30

100

108

0

Figure 10. Effects of Base−Emitter Resistance

TJ, JUNCTION TEMPERATURE (°C)

30

60

90

120

150

107

105

104

103

VCE = 30 V

IC = 10 x ICES

IC = 2 x ICES

IC ≈ ICES

ICES VALUES

OBTAINED FROM

FIGURE 12

106

1.5

2.0

IC, COLLECTOR CURRENT (mA)

5.0

10

20 30 50

100 200 300

2000

1.2

0.9

0.6

0.3

0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

Figure 11. “On” Voltage

3.0

500 1000

VBE @ VCE = 2.0 V

104

−0.2

Figure 12. Collector Cut−Off Region

VBE, BASE−EMITTER VOLTAGE (VOLTS)

103

102

10−1

−0.1

0

+0.1

+0.2

+0.3

+0.4

+0.5

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE

FORWARD

IC = ICES

+2.5

2.0

Figure 13. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

3.0 5.0

10

20 30 50

100 200

2000

−55 °C to +100°C

+2.0

+1.5

+0.5

0

−0.5

−1.0

−1.5

−2.0

−2.5

qVB FOR VBE

TJ = 100°C to 150°C

*APPLIES FOR IC/IB ≤

hFE @VCE + 1.0 V

2

+1.0

300 500

1000

101

100

10− 2

*qVC FOR VCE(sat)

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