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2N5038 Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce 2N5038
Description  NPN Silicon Transistors
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N5038 Fiches technique(HTML) 2 Page - ON Semiconductor

  2N5038_06 Datasheet HTML 1Page - ON Semiconductor 2N5038_06 Datasheet HTML 2Page - ON Semiconductor 2N5038_06 Datasheet HTML 3Page - ON Semiconductor  
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2N5038
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*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (2)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
90
Vdc
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 V)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
50
10
mAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
(VEB = 7 Vdc, IC = 0)
IEBO
5
50
mAdc
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 12 Adc, VCE = 5 Vdc)
hFE
20
100
Collector−Emitter Saturation Voltage
(IC = 20 Adc, IB = 5 Adc)
VCE(sat)
2.5
Vdc
Base−Emitter Saturation Voltage
(IC = 20 Adc, IB = 5 Adc)
VBE(sat)
3.3
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common−Emitter Small−Signal Short−Circuit
Forward Current Transfer Ratio
(IC = 2 Adc, VCE = 10 Vdc, f = 5 MHz)
|hfe|
12
SWITCHING CHARACTERISTICS
RESISTIVE LOAD
Rise Time
(VCC = 30 Vdc)
tr
0.5
μs
Storage Time
(IC = 12 Adc, IB1 = IB2 = 1.2 Adc)
ts
1.5
μs
*Indicates JEDEC Registered Data.
(2) Pulse Test: Pulse Width v 300, μs, Duty Cycle v 2%.
100
Figure 2. Forward Bias Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
5
2
0.1
1
10
100
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
70
1
dc
50
20
10
0.5
0.2
2
3
5
7
20
30
50
TC = 25°C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
Second breakdown pulse limits are valid for duty cycles
to 10%. At high case temperatures, thermal limitations may
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.


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