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BUK436-800A Fiches technique(PDF) 5 Page - NXP Semiconductors

No de pièce BUK436-800A
Description  PowerMOS transistor
Download  7 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK436-800A Fiches technique(HTML) 5 Page - NXP Semiconductors

  BUK436-800A Datasheet HTML 1Page - NXP Semiconductors BUK436-800A Datasheet HTML 2Page - NXP Semiconductors BUK436-800A Datasheet HTML 3Page - NXP Semiconductors BUK436-800A Datasheet HTML 4Page - NXP Semiconductors BUK436-800A Datasheet HTML 5Page - NXP Semiconductors BUK436-800A Datasheet HTML 6Page - NXP Semiconductors BUK436-800A Datasheet HTML 7Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
PowerMOS transistor
BUK436W-800A/B
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG); conditions: ID = 4 A; parameter VDS
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
0
20
40
QG / nC
VGS / V
12
10
8
6
4
2
0
VDS / V =160
640
BUK4y6-800
0
1
2
BUK4y6-800A
VSDS / V
IF / A
10
5
0
Tj / C = 150
25
February 1998
5
Rev 1.000


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