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BD136-10 Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce BD136-10
Description  PNP SILICON TRANSISTORS
Download  4 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BD136-10 Fiches technique(HTML) 2 Page - STMicroelectronics

  BD136-10 Datasheet HTML 1Page - STMicroelectronics BD136-10 Datasheet HTML 2Page - STMicroelectronics BD136-10 Datasheet HTML 3Page - STMicroelectronics BD136-10 Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
10
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -30 V
VCB = -30 V
TC = 125
oC
-0.1
-10
µA
µA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = -5 V
-10
µA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = -30 mA
for BD136
for BD138
for BD140
-45
-60
-80
V
V
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = -0.5 A
IB = -0.05 A
-0.5
V
VBE
Base-Emitter Voltage
IC = -0.5 A
VCE = -2 V
-1
V
hFE
DC Current Gain
IC = -5 mA
VCE = -2 V
IC = -150 mA
VCE = -2 V
IC = -0.5 A
VCE = -2 V
25
40
25
250
hFE
hFE Groups
IC = -150 mA
VCE = -2 V
for BD136/BD140 group-10
for BD136/BD140 group-16
63
100
160
250
* Pulsed: Pulse duration = 300
µs, duty cycle 1.5 %
Safe Operating Areas
BD136 / BD138 / BD140
2/4


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