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BUK202-50 Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BUK202-50 Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 13 page Philips Semiconductors Product specification PowerMOS transistor BUK202-50Y TOPFET high side switch LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Battery voltages V BG Continuous off-state supply voltage - 0 50 V Reverse battery voltages 1 External resistors: -V BG Repetitive peak supply voltage R I = RS ≥ 4.7 kΩ, δ ≤ 0.1 - 32 V -V BG Continuous reverse supply voltage R I = RS ≥ 4.7 kΩ -16 V I L Continuous load current T mb ≤ 110 ˚C - 20 A P D Total power dissipation T mb ≤ 25 ˚C - 125 W T stg Storage temperature - -55 175 ˚C T j Continuous junction temperature 2 - - 150 ˚C T sold Lead temperature during soldering - 250 ˚C Input and status I I Continuous input current - -5 5 mA I S Continuous status current - -5 5 mA I I Repetitive peak input current δ ≤ 0.1 -20 20 mA I S Repetitive peak status current δ ≤ 0.1 -20 20 mA Inductive load clamping E BL Non-repetitive clamping energy T mb = 150 ˚C prior to turn-off - 1.7 J ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 k Ω THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance 3 R th j-mb Junction to mounting base - - 0.8 1 K/W R th j-a Junction to ambient in free air - 60 75 K/W 1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value. 2 For normal continuous operation. A higher T j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 Of the output Power MOS transistor. April 1995 2 Rev 1.100 |
Numéro de pièce similaire - BUK202-50 |
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Description similaire - BUK202-50 |
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