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BUK116-50S Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BUK116-50S
Description  Logic level TOPFET SMD version of BUK106-50L/S
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK116-50S Fiches technique(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Logic level TOPFET
BUK116-50L/S
SMD version of BUK106-50L/S
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Voltages
V
DSS
Continuous off-state drain source
V
IS = 0 V
-
50
V
voltage
1
V
IS
Continuous input voltage
-
0
11
V
V
FS
Continuous flag voltage
-
0
11
V
V
PS
Continuous supply voltage
-
0
11
V
Currents
V
IS =
-
8
5
V
I
D
Continuous drain current
T
mb ≤ 25 ˚C
-
50
45
A
I
D
Continuous drain current
T
mb ≤ 100 ˚C
-
31
28
A
I
DRM
Repetitive peak on-state drain current
T
mb ≤ 25 ˚C
-
200 180
A
Thermal
P
tot
Total power dissipation
T
mb = 25 ˚C
-
125
W
T
stg
Storage temperature
-
-55
150
˚C
T
j
Junction temperature
2
continuous
-
150
˚C
T
sold
Lead temperature
during soldering
-
250
˚C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply
An n-MOS transistor turns on
For internal overload protection to
connected, TOPFET can protect
between the input and source to
remain latched while the control
itself from two types of overload -
quickly discharge the power
circuit is high, external series input
over temperature and short circuit
MOSFET gate capacitance.
resistance must be provided. Refer
load.
to INPUT CHARACTERISTICS.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
IS =8
5
-
V
V
PSP
Protection supply voltage
3
for valid protection
BUK116-50L
4.4
4
-
V
BUK116-50S
5.4
5
-
V
Over temperature protection
V
PS = VPSN
V
DDP(T)
Protected drain source supply voltage
V
IS = 10 V; RI ≥ 2 kΩ
-50
V
V
IS = 5 V; RI ≥ 1 kΩ
-50
V
Short circuit load protection
V
PS = VPSN; L ≤ 10 µH
V
DDP(P)
Protected drain source supply voltage
4
V
IS = 10 V; RI ≥ 2 kΩ
-24
V
V
IS = 5 V; RI ≥ 1 kΩ
-45
V
P
DSM
Instantaneous overload dissipation
-
4
kW
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model;
-
2
kV
voltage
C = 250 pF; R = 1.5 k
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher T
j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.
3 The minimum supply voltage required for correct operation of the overload protection circuits.
4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V
DDP(P) maximum.
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
July 1996
2
Rev 1.000


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